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TGA2623-CP Datasheet GaN Power Amplifier

Manufacturer: TriQuint Semiconductor

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Datasheet Details

Part number TGA2623-CP
Manufacturer TriQuint Semiconductor
File Size 557.29 KB
Description GaN Power Amplifier
Download TGA2623-CP Download (PDF)

General Description

TriQuint’s TGA2623-CP is a packaged, high power Xband amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC production process.

Operating from 10 – 11 GHz, the TGA2623-CP achieves 32 W saturated output power, a power-added efficiency of greater than 41 %, and power gain of 27 dB.

The TGA2623-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management.

Overview

Applications  X-band Radar TGA2623-CP 10 – 11 GHz 32 W GaN Power Amplifier.

Key Features

  • Frequency Range: 10.
  • 11 GHz.
  • PSAT: 45 dBm @ PIN = 18 dBm.
  • PAE: >41% @ PIN = 18 dBm.
  • Power Gain: 27 dB @ PIN = 18 dBm.
  • Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical (Pulsed VD: PW = 100 us and DC = 10%).
  • Package Dimensions: 15.2 x 15.2 x 3.5 mm.
  • Package base is pure Cu offering superior thermal management Functional Block Diagram General.

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