TGA2625-CP Datasheet GaN Power Amplifier

Manufacturer: TriQuint Semiconductor

Datasheet Details

TriQuint’s TGA2625-CP is a packaged high-power X-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process.

Operating from 10 to 11 GHz, the TGA2625-CP achieves 42.5 dBm saturated output power, a power-added efficiency of > 40 %, and power gain of 28 dB.

The TGA2625-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management.

Applications  Radar  Communications TGA2625-CP 10 to 11 GHz, 17 W GaN Power Amplifier.

Frequency Range: 10.
11 GHz.
Pout: 42.5 dBm (at PIN = 15 dBm).
PAE: > 40 %.
Power Gain: 28 dB (at PIN = 15 dBm).
Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical, pulsed (PW = 100 µs, DC = 10 %).
Package Dimensions: 15.2 x 15.2 x 3.5 mm.
Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 10 9 8 7 6 General.