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TriQuint Semiconductor

TGA4909 Datasheet Preview

TGA4909 Datasheet

High Linearity LNA Gain Block

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Applications
Repeaters
Mobile Infrastructure
Defense/Aerospace
LTE / WCDMA / EDGE / CDMA
General Purpose Wireless
IF amplifier, RF driver amplifier
Military Communications
TGA4909
High Linearity LNA Gain Block
Product Features
Frequency Range: 0.05 – 4.0 GHz
NF: 1.1 dB (@ 1.9 GHz)
Output IP3: +39 dBm (@ 1.9 GHz, 4 dBm/tone Pout)
P1dB : +22 dBm (@ 1.9 GHz)
Small Signal Gain: 22 dB (@ 1.9 GHz)
+5V Single Supply, 125 mA Bias Current
Chip Dimensions: 1.49 x 0.85 x 0.085 mm
Functional Block Diagram
General Description
The TriQuint TGA4909 is a high linearity Low Noise
Amplifier. The amplifier is fabricated using TriQuint's
TQPED process. It is internally matched and only
requires an external RF choke and blocking/bypass
capacitors for operation from a single +5V supply. The
internal active bias circuit also enables stable operation
over bias and temperature variations.
The TGA4909 covers the 0.05−4.0 GHz frequency
band and is targeted for wireless infrastructure or other
applications requiring high linearity and/or low noise
figure.
Die attach should be accomplished with conductive
epoxy only. Eutectic attach is not recommended.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1
2
3
4
Symbol
RF Input
(Opt.) External Cap.
(Opt.) External Cap.
RF Output / Bias
Ordering Information
Part
TGA4909
ECCN
EAR99
Description
High Linearity LNA
Gain Block
Datasheet: Rev - 06-19-14
© 2014 TriQuint
- 1 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com




TriQuint Semiconductor

TGA4909 Datasheet Preview

TGA4909 Datasheet

High Linearity LNA Gain Block

No Preview Available !

TGA4909
High Linearity LNA Gain Block
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD)
7.0 V
Power Dissipation, 85 °C (PDISS)
1.2 W
Input Power, CW, 50 Ω, T=25 ºC (PIN) 23 dBm
Storage Temperature
-55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Recommended Operating Conditions
Parameter
Value
Drain Voltage (VD)
5V
Drain Current (IDQ)
125 mA
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25 0C, VD = 5 V, tested using EVB application circuit shown on page 7
Parameter
Min
Typical
Max
Operational Frequency Range
0.05
1.9
4.0
Small Signal Gain
22
Input Return Loss
13
Output Return Loss
13
Noise Figure
1.1
Output Power at 1 dB Gain Compression
22
Output IP3 (Pout=4 dBm/tone)
39
Gain Temperature Coefficient
-0.012
Noise Figure Temperature Coefficient
0.005
Units
GHz
dB
dB
dB
dB
dBm
dBm
dB/°C
dB/°C
Datasheet: Rev - 06-19-14
© 2014 TriQuint
- 2 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com


Part Number TGA4909
Description High Linearity LNA Gain Block
Maker TriQuint Semiconductor
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TGA4909 Datasheet PDF






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