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TGF2023-2-10 - 50 Watt Discrete Power GaN on SiC HEMT

General Description

The TriQuint TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz.

The TGF2023-2-10 is designed using TriQuint’s proven TQGaN25 production process.

Key Features

  • Frequency Range: DC - 18 GHz.
  • 47.3 dBm Nominal PSAT at 3 GHz.
  • 69.5% Maximum PAE.
  • 19.8 dB Nominal Power Gain at 3 GHz.
  • Bias: VD = 12 - 32 V, IDQ = 200 - 1000 mA.
  • Technology: TQGaN25 on SiC.
  • Chip Dimensions: 0.82 x 2.48 x 0.10 mm Functional Block Diagram General.

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Datasheet Details

Part number TGF2023-2-10
Manufacturer TriQuint Semiconductor
File Size 1.57 MB
Description 50 Watt Discrete Power GaN on SiC HEMT
Datasheet download datasheet TGF2023-2-10 Datasheet

Full PDF Text Transcription (Reference)

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Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 47.3 dBm Nominal PSAT at 3 GHz • 69.5% Maximum PAE • 19.8 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 200 - 1000 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.82 x 2.48 x 0.10 mm Functional Block Diagram General Description The TriQuint TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-10 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-10 typically provides 47.