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TriQuint Semiconductor

TGF2060 Datasheet Preview

TGF2060 Datasheet

600 um Discrete GaAs pHEMT

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Applications
Defense & Aerospace
High-Reliability
Test and Measurement
Commercial
Broadband Wireless
TGF2060
600 um Discrete GaAs pHEMT
Product Features
Frequency Range: DC - 20 GHz
28 dBm Typical Output Power - P1dB
12 dB Typical Gain at 12 GHz
55% Typical PAE at 12 GHz
1.4 dB Typical NF at12 GHz
No Vias
Technology: 0.25 um GaAs pHEMT
Chip Dimensions: 0.41 x 0.34 x 0.10 mm
Functional Block Diagram
Drain
Gate
Source
General Description
The TriQuint TGF2060 is a discrete 600 micron pHEMT
which operates from DC to 20 GHz. The TGF2060 is
fabricated using TriQuint’s proven standard 0.25 um
power pHEMT production process. This process
features advanced techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2060 typically provides 28 dBm of output power
at P1dB with gain of 12 dB and 55% power-added
efficiency at 1 dB compression. This performance
makes the TGF2060 appropriate for high efficiency
applications. The protective overcoat layer with silicon
nitride provides a level of environmental robustness and
scratch protection.
The TGF2060 is lead-free and RoHS compliant.
Pad Configuration
Pad Dimensions
G (71um X 71um)
D (71um X 71um)
S (121um X 71um)
Terminals
Gate
Drain
Source
Ordering Information
Part
TGF2060
ECCN
EAR99
Description
600 um GaAs pHEMT
Datasheet: Rev. C 11-04-13
© 2013 TriQuint
- 1 of 8 -
Disclaimer: Subject to change without notice
www.triquint.com




TriQuint Semiconductor

TGF2060 Datasheet Preview

TGF2060 Datasheet

600 um Discrete GaAs pHEMT

No Preview Available !

TGF2060
600 um Discrete GaAs pHEMT
Absolute Maximum Ratings
Symbol
VDS
Parameter
Drain-Source Voltage(2)
Absolute
12
Continuous
8
Units
V
VGS Gate- Source Voltage -7 -3 V
IDS Drain Current(2)
IDSS
IDSS
mA
IG,F
Forward Gate Current
30
5 mA
TCH
Channel Temperature(3)
175 (4)
150 (5)
°C
TSTG
PIN
Storage Temperature
Input Continuous Wave Power(2)
-65 to 150
24
-65 to 150
at 3 dB Compression
°C
dBm
PTOT
Total Power Dissipation
3.2
2.1 W
Notes:
1. These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only,
and functional operation of the device at these conditions is not implied.
2. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum total power
dissipation listed in the table.
3. Junction operating temperature will directly affect the device median time to failure. For maximum life, it is recommended that
junction temperatures be maintained at the lowest possible levels.
4. When operated at this channel temperature, the median life is 1.0E+5 hours.
5. When operated at this channel temperature, the median life is 1.0E+6 hours.
Electrical Characteristics
Test conditions unless otherwise noted: Temperature=25°C
Symbol Parameter
Conditions
P1dB
G1dB
PAE
Output Power at 1dB Compression
Gain at P1dB
PAE at P1dB
Freq=12GHz
VDS=8V
IDS=50%IDSS
NF 50 ohm Noise Figure
Freq.=12 GHz, VDS=3V, IDS=25 mA
IDSS Saturated Drain Current
VDS=2V, VGS=0V
Gm Transconductance
VDS=2V, IDS=50%IDSS
VP Pinch-Off Voltage
VDS=2V, IDS=0.60 mA
BVGD
Gate-Drain Breakdown Voltage
IG=0.60mA, source open
BVGS
RTH
Gate-Source Breakdown Voltage
Thermal Resistance(2)
IG=0.60mA, drain open
AuSn eutectic attach
Notes:
1. Typical Standard Deviation of 2mA (1 σ).
2. Based on IR Scan
Min
120
-1.5
Typ
28
12
55
1.4
194(1)
232
-1.0
-15
-15
54
Max Units
dBm
dB
%
dB
268 mA
mS
-0.5 V
-12 V
V
°C/W
Datasheet: Rev. C 11-04-13
© 2013 TriQuint
- 2 of 8 -
Disclaimer: Subject to change without notice
www.triquint.com


Part Number TGF2060
Description 600 um Discrete GaAs pHEMT
Maker TriQuint Semiconductor
Total Page 8 Pages
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