Datasheet Details
| Part number | TGF2960-SD |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 1.20 MB |
| Description | 0.5 Watt GaAs HFET |
| Datasheet |
 TGF2960-SD Datasheet
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| Part number | TGF2960-SD |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 1.20 MB |
| Description | 0.5 Watt GaAs HFET |
| Datasheet |
TGF2960-SD Datasheet
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The TGF2960-SD is a high performance 1/2-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package.
The device’s ideal operating point is at a drain bias of 8 V and 100 mA.
At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 19 dB of gain, 28 dBm of saturated output power, and 40 dBm of output IP3.
TGF2960-SD 0.5 Watt DC-5 GHz Packaged HFET Key.
| Part Number | Description |
|---|---|
| TGF2961-SD | 1 Watt GaAs HFET |
| TGF2018 | 180 um Discrete GaAs pHEMT |
| TGF2021-01 | DC-12 GHz Discrete Power pHEMT |
| TGF2021-02 | DC - 12 GHz Discrete power pHEMT |
| TGF2021-04 | DC - 12 GHz Discrete power pHEMT |
| TGF2021-04-SD | DC-4 GHz Packaged Power pHEMT |
| TGF2021-08 | DC - 12 GHz Discrete power pHEMT |
| TGF2021-12 | DC - 12 GHz Discrete power pHEMT |
| TGF2022-06 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-12 | DC - 20 GHz Discrete power pHEMT |