TGF2961-SD
TGF2961-SD is 1 Watt GaAs HFET manufactured by TriQuint Semiconductor.
1 Watt DC-4 GHz Packaged HFET
Key Features
- Frequency Range: DC-4 GHz Nominal 900 MHz Application Board Performance:
- TOI: 44 dBm
- 31 dBm Psat, 30 dBm P1dB
- Gain: 18 dB
- Input Return Loss: -15 dB
- Output Return Loss: -7 dB
- Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V (Typical)
- Package Dimensions: 4.5 x 4 x 1.5 mm
900 MHz Application Board Performance
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
Primary Applications
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- Cellular Base Stations WiMAX Wireless Infrastructure IF & LO Buffer Applications RFID
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Product Description
The TGF2961-SD is a high performance 1-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a...
