TGF2961-SD Overview
The TGF2961-SD is a high performance 1-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package. The device’s ideal operating point is at a drain bias of 8 V and 200 mA. At this bias at 900 MHz when matched into 50 ohms using external ponents, this device is capable of 18 dB of gain, 30 dBm of saturated output power, and 44 dBm of output IP3 Evaluation boards at 900...
TGF2961-SD Key Features
- TOI: 44 dBm
- 31 dBm Psat, 30 dBm P1dB
- Gain: 18 dB
- Input Return Loss: -15 dB
- Output Return Loss: -7 dB
- Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V (Typical)
- Package Dimensions: 4.5 x 4 x 1.5 mm