TGF2961-SD Datasheet PDF - TriQuint Semiconductor 1 Watt GaAs HFET Specs

TGF2961-SD - 1 Watt GaAs HFET

Datasheet Summary

Description

The TGF2961-SD is a high performance 1-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package.

The device’s ideal operating point is at a drain bias of 8 V and 200 mA.

Features

Frequency Range: DC-4 GHz Nominal 900 MHz.

Datasheet Details

Part number	TGF2961-SD
Manufacturer	TriQuint Semiconductor
File Size	1.19 MB
Description	1 Watt GaAs HFET
Datasheet	TGF2961-SD Datasheet
Additional preview pages of the TGF2961-SD datasheet.

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Full PDF Text Transcription

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TGF2961-SD 1 Watt DC-4 GHz Packaged HFET Key Features • Frequency Range: DC-4 GHz Nominal 900 MHz Application Board Performance: • TOI: 44 dBm • 31 dBm Psat, 30 dBm P1dB • Gain: 18 dB • Input Return Loss: -15 dB • Output Return Loss: -7 dB • Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V (Typical) • Package Dimensions: 4.5 x 4 x 1.5 mm 900 MHz Application Board Performance Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical Primary Applications • • • • • Cellular Base Stations WiMAX Wireless Infrastructure IF & LO Buffer Applications RFID www.DataSheet.net/ Product Description The TGF2961-SD is a high performance 1-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package.

Published: Jul 1, 2012 |