TGF2960-SD Overview
The TGF2960-SD is a high performance 1/2-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package. The device’s ideal operating point is at a drain bias of 8 V and 100 mA. At this bias at 900 MHz when matched into 50 ohms using external ponents, this device is capable of 19 dB of gain, 28 dBm of saturated output power, and 40 dBm of output IP3.
TGF2960-SD Key Features
- TOI: 40 dBm
- 28 dBm Psat, 27 dBm P1dB
- Gain: 19 dB
- Input Return Loss: -10 dB
- Output Return Loss: -5 dB
- Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V (Typical)
- Package Dimensions: 4.5 x 4 x 1.5 mm