Datasheet Details
| Part number | TGF2961-SD |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 1.19 MB |
| Description | 1 Watt GaAs HFET |
| Datasheet |
 TGF2961-SD Datasheet
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| Part number | TGF2961-SD |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 1.19 MB |
| Description | 1 Watt GaAs HFET |
| Datasheet |
TGF2961-SD Datasheet
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The TGF2961-SD is a high performance 1-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package.
The device’s ideal operating point is at a drain bias of 8 V and 200 mA.
At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 18 dB of gain, 30 dBm of saturated output power, and 44 dBm of output IP3 Evaluation boards at 900 MHz, 1900 MHz and 2100 MHz available on request.
TGF2961-SD 1 Watt DC-4 GHz Packaged HFET Key.
| Part Number | Description |
|---|---|
| TGF2960-SD | 0.5 Watt GaAs HFET |
| TGF2018 | 180 um Discrete GaAs pHEMT |
| TGF2021-01 | DC-12 GHz Discrete Power pHEMT |
| TGF2021-02 | DC - 12 GHz Discrete power pHEMT |
| TGF2021-04 | DC - 12 GHz Discrete power pHEMT |
| TGF2021-04-SD | DC-4 GHz Packaged Power pHEMT |
| TGF2021-08 | DC - 12 GHz Discrete power pHEMT |
| TGF2021-12 | DC - 12 GHz Discrete power pHEMT |
| TGF2022-06 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-12 | DC - 20 GHz Discrete power pHEMT |