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TQM7M4022 - 3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module

Description

Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications.

The small size and high performance is achieved with high-reliability InGaP HBT technology.

The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports.

Features

  • Very compact size.
  • 7x7x1.3mm³.
  • High efficiency.
  • typical GSM850 53%, GSM900 58%, DCS 50%, PCS 50%.
  • Positive supply voltage.
  • 3.0 to 4.5 V.
  • No reference voltage needed.
  • 50 Ω input and output impedances.
  • GPRS class 12 compatible.
  • CMOS band select and power control inputs.
  • High-reliability InGaP technology.
  • Ruggedness 10:1. Bottom view www. DataSheet4U. com Side view ! Caution! ESD se.

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Datasheet Details

Part number TQM7M4022
Manufacturer TriQuint Semiconductor
File Size 205.93 KB
Description 3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module
Datasheet download datasheet TQM7M4022 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com TQM7M4022 ( Preliminary data sheet) 3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module 7mm x 7mm LGA Package Outline: Description: Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT technology. The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands. Band select and power control inputs on the module are CMOS compatible. Dimensions in mm Top view Features: • Very compact size – 7x7x1.3mm³ • High efficiency – typical GSM850 53%, GSM900 58%, DCS 50%, PCS 50%.
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