900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Trinno

TGD30N40P Datasheet Preview

TGD30N40P Datasheet

IGBT

No Preview Available !

TGD30N40P
Features:
400V Trench Technology
High Speed Switching
Low Conduction Loss
Positive Temperature Coefficient
Easy parallel Operation
RoHS compliant
JEDEC Qualification
Applications :
Plasma Display Panel, Soft switching application,
D-PAK
C
GE
Device
TGD30N40P
Package
D-PAK
Packaging type
Reel
Marking
TGD30N40P
Remark
RoHS
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Current
Pulsed Collector Current (Note 1)
Power Dissipation
Operating Junction Temperature
TC = 25
TC = 100
TC = 25
TC = 100
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
Ic
ICM
PD
TJ
TSTG
TL
Value
400
±30
60
30
300
56.8
22.7
-55 ~ 150
-55 ~ 150
300
Notes :
(1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%.
Unit
V
V
A
A
A
W
W
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
August. 2012 : Rev0
www.trinnotech.com
Value
2.2
110
Unit
/W
/W
1/6




Trinno

TGD30N40P Datasheet Preview

TGD30N40P Datasheet

IGBT

No Preview Available !

TGD30N40P
Electrical Characteristics of the IGBT TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Collector Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate Emitter Leakage Current
BVCES
ICES
IGES
VGE = 0V, IC = 1mA
VCE = 400V, VGE = 0V
VCE = 0V, VGE = ±30V
400 --
--
V
-- -- 100 µA
-- -- ± 250 nA
ON
Gate Emitter Threshold Voltage
VGE(TH)
VGE = VCE, IC = 1mA
2 3.1 4.5
Collector Emitter Saturation Voltage
VCE(SAT)
VGE = 15V, IC = 30A, TJ = 25 oC
--
1.4
2.0
VGE = 15V, IC = 30A, TJ = 125 oC -- 1.52
--
V
V
V
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CIES
COES
CRES
VCE = 25V,
VGE = 0V,
f = 1MHz
-- 845
-- 50
-- 23
--
--
--
pF
pF
pF
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
td(on)
-- 13
--
ns
tr
VCC = 150V, IC = 30A,
RG = 5Ω, VGE = 15V,
-- 105
--
ns
td(off)
Resistive Load, TJ = 25 oC
-- 35
--
ns
tf
-- 160
--
ns
td(on)
-- 14
--
ns
tr
VCC = 150V, IC = 30A,
RG = 5Ω, VGE = 15V,
-- 145
--
ns
td(off)
Resistive Load, TJ = 125 oC
-- 40
--
ns
tf
-- 240
--
ns
Qg
-- 26
--
nC
Qge
VCC = 150V, IC = 30A,
VGE = 15V
-- 3.1
--
nC
Qgc -- 9 -- nC
August. 2012 : Rev0
www.trinnotech.com
2/6


Part Number TGD30N40P
Description IGBT
Maker Trinno
PDF Download

TGD30N40P Datasheet PDF






Similar Datasheet

1 TGD30N40P Field Stop Trench IGBT
TRinno
2 TGD30N40P IGBT
Trinno





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy