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TGD30N40P - Field Stop Trench IGBT

Datasheet Summary

Features

  • 400V Trench Technology.
  • High Speed Switching.
  • Low Conduction Loss.
  • Positive Temperature Coefficient.
  • Easy parallel Operation.
  • RoHS compliant.
  • JEDEC Qualification.

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Datasheet preview – TGD30N40P

Datasheet Details

Part number TGD30N40P
Manufacturer TRinno
File Size 731.76 KB
Description Field Stop Trench IGBT
Datasheet download datasheet TGD30N40P Datasheet
Additional preview pages of the TGD30N40P datasheet.

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Full PDF Text Transcription

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TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Plasma Display Panel, Soft switching application, D-PAK C GE Device TGD30N40P Package D-PAK Packaging type Reel Marking TGD30N40P Remark RoHS Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM PD TJ TSTG TL Value 400 ±30 60 30 300 56.8 22.
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