TGD30N40P - IGBT

Key Features

400V Trench Technology.
High Speed Switching.
Low Conduction Loss.
Positive Temperature Coefficient.
Easy parallel Operation.
RoHS compliant.
JEDEC Qualification.

TGD30N40P igbt by Trinno - Datasheet Preview

Datasheet Details

Part number	TGD30N40P
Manufacturer	Trinno
File Size	731.76 KB
Description	IGBT
Datasheet	TGD30N40P Datasheet

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TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Plasma Display Panel, Soft switching application, D-PAK C GE Device TGD30N40P Package D-PAK Packaging type Reel Marking TGD30N40P Remark RoHS Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM PD TJ TSTG TL Value 400 ±30 60 30 300 56.8 22.