TSA10N80M Datasheet - Truesemi

N-Channel MOSFET

TSA10N80M Features

* 10.0A, 800V, RDS(on) = 1.10Ω @VGS = 10 V

* Low gate charge ( typical 45nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability G DS TO-3P or TO247 Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol

TSA10N80M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSA10N80M Datasheet (224.53 KB)

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TSA10N80M

Manufacturer:

Truesemi

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224.53 KB

Description:

N-channel mosfet.

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TSA10N80M N-Channel MOSFET Truesemi

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TSA10N80M Features

TSA10N80M General Description

Datasheet Details

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