TSB12N65M Datasheet N-Channel MOSFET

Manufacturer: Truesemi

TSB12N65M n-channel mosfet by Truesemi - Datasheet Preview

Datasheet Details

Part number	TSB12N65M
Manufacturer	Truesemi
File Size	302.69 KB
Description	N-Channel MOSFET
Download	TSB12N65M Download (PDF)

General Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

TSB12N65M / TSI12N65M TSB12N65M / TSI12N65M 650V N-Channel MOSFET.

Key Features

- 12A, 650V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage.

More Datasheets from Truesemi

Part Number	Description
TSB12N60M	N-Channel MOSFET
TSB10N60M	N-Channel MOSFET
TSB10N60S	N-Channel MOSFET
TSB10N65M	N-Channel MOSFET
TSB11N60S	N-Channel MOSFET
TSB20N60S	N-Channel MOSFET
TSB20N65S	N-Channel MOSFET
TSB4N60M	N-Channel MOSFET
TSB60R190S1	N-Channel MOSFET
TSB65R500S1	N-Channel MOSFET