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TSB10N65M Datasheet N-channel MOSFET

Manufacturer: Truesemi

Overview: TSB10N65M / TSI10N65M TSB10N65M / TSI10N65M 650V N-Channel MOSFET.

Datasheet Details

Part number TSB10N65M
Manufacturer Truesemi
File Size 315.01 KB
Description N-Channel MOSFET
Datasheet TSB10N65M-Truesemi.pdf

General Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • - 10A, 650V, RDS(on) = 0.95Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage.

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