TSB12N65M - N-Channel MOSFET

Product Overview

Truesemi

Datasheet Details

Part number	TSB12N65M
Manufacturer	Truesemi
File Size	302.69 KB
Description	N-Channel MOSFET
Datasheet	TSB12N65M Datasheet
Additional preview pages of the TSB12N65M datasheet.

Product details

Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 12A, 650V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage.

📁 Similar Datasheet

TSB12N10A - 100V N-Channel DTMOS (Unigroup)
TSB12LV01B - TSB12LV01B IEEE 1394-1995 High-Speed Serial-Link-Layer Controller (ETCTI)
TSB12LV01B-EP - IEEE 1394-1995 High-Speed Serial-Bus Link-Layer Controller (ETCTI)
TSB12LV21B - IEEE 1394 Link Layer Controller (ETCTI)
TSB12LV21B-EP - IEEE 1394 Link Layer Controller (ETCTI)
TSB12LV21BI - IEEE 1394 Link Layer Controller (ETCTI)
TSB12LV21BM - IEEE 1394 Link Layer Controller (ETCTI)
TSB12LV26 - TSB12LV26 TSB12LV26I OHCI-Lynx PCI-Based IEEE 1394 Host Controller (ETCTI)

Other Datasheets by Truesemi

TSB12N60M - N-Channel MOSFET
TSB10N60M - N-Channel MOSFET
TSB10N60S - N-Channel MOSFET
TSB10N65M - N-Channel MOSFET
TSB11N60S - N-Channel MOSFET
TSB20N60S - N-Channel MOSFET

Published: Apr 12, 2017 |