Datasheet Summary
TSB7N60M/TSI7N60M
TSB7N60M/TSI7N60M
600V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
- 7.0A,600V,Max.RDS(on)=1.3 Ω @ VGS =10V
- Low gate charge(typical 29nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
TSI7N60M...