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TSB7N60M - N-Channel MOSFET

Features

  • This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
  • 7.0A,600V,Max. RDS(on)=1.3 Ω @ VGS =10V.
  • Low gate cha.

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Datasheet Details

Part number TSB7N60M
Manufacturer Truesemi
File Size 621.69 KB
Description N-Channel MOSFET
Datasheet download datasheet TSB7N60M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSB7N60M/TSI7N60M TSB7N60M/TSI7N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. • 7.0A,600V,Max.RDS(on)=1.
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