TSB80R240S1 Key Features
- 850V @TJ = 150 ℃
- Typ. RDS(on) = 0.22Ω
- Ultra Low gate charge (typ. Qg = 70nC)
- 100% avalanche tested
- Part: TSB80R240S1
- Manufacturer: Truesemi
- Size: 552.54 KB
Related Truesemi Datasheets
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| TSB10N60M | N-Channel MOSFET |
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TSB80R240S1 Description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in...