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TSB8N65M Datasheet N-channel MOSFET

Manufacturer: Truesemi

Overview: TSB8N65M / TSI8N65M 650V N-Channel MOSFET General.

Datasheet Details

Part number TSB8N65M
Manufacturer Truesemi
File Size 256.33 KB
Description N-Channel MOSFET
Datasheet TSB8N65M-Truesemi.pdf

General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • 7.5A, 650V, RDS(on) = 1.60 @VGS = 10 V.
  • Low gate charge ( typical 29nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pul.

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TSB8N65M Distributor