TSB8N65M - N-Channel MOSFET

Product Overview

Truesemi

Part number	TSB8N65M
Manufacturer	Truesemi
File Size	256.33 KB
Description	N-Channel MOSFET
Datasheet	TSB8N65M Datasheet
Additional preview pages of the TSB8N65M datasheet.

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

7.5A, 650V, RDS(on) = 1.60 @VGS = 10 V.
Low gate charge ( typical 29nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pul.

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Published: Apr 12, 2017 |