TSB840M Datasheet - Truesemi

TSB840M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSB840M Features

* 9.0A,500V,Max.RDS(on)=0.80 Ω @ VGS =10V

* Low gate charge(typical 30nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D2-PAK ( TO-263 ) Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS

TSB840M Datasheet (298.44 KB)