TSB8N60M Datasheet, Truesemi

- 7.5A, 600V, RDS(on) = 1.2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D2-PAK.

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in .