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TSB8N60M Datasheet N-Channel MOSFET

Manufacturer: Truesemi

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Datasheet Details

Part number TSB8N60M
Manufacturer Truesemi
File Size 267.15 KB
Description N-Channel MOSFET
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General Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

TSB8N60M / TSI8N60M TSB8N60M / TSI8N60M 600V N-Channel MOSFET.

Key Features

  • - 7.5A, 600V, RDS(on) = 1.2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Sin.

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