TSD5N50M Datasheet - Truesemi

N-Channel MOSFET

TSD5N50M Features

* 4.0A,500V,Max.RDS(on)=1.50 Ω @ VGS =10V

* Low gate charge(typical 20nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSD5N50M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSD5N50M Datasheet (340.58 KB)

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Datasheet Details

Part number:

TSD5N50M

Manufacturer:

Truesemi

File Size:

340.58 KB

Description:

N-channel mosfet.

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TSD5N50M N-Channel MOSFET Truesemi

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TSD5N50M Features

TSD5N50M General Description

Datasheet Details

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