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TSD5N60M Datasheet - Truesemi

N-Channel MOSFET

TSD5N60M Features

* - 3.0A, 600V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS GDS G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Pa

TSD5N60M General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

TSD5N60M Datasheet (289.66 KB)

Preview of TSD5N60M PDF

Datasheet Details

Part number:

TSD5N60M

Manufacturer:

Truesemi

File Size:

289.66 KB

Description:

N-channel mosfet.

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TSD5N60M N-Channel MOSFET Truesemi

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