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TSD5N65M Datasheet N-Channel MOSFET

Manufacturer: Truesemi

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Datasheet Details

Part number TSD5N65M
Manufacturer Truesemi
File Size 303.53 KB
Description N-Channel MOSFET
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General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

TSD5N65M / TSU5N65M TSD5N65M/TSU5N65M 650V N-Channel MOSFET General.

Key Features

  • - 3.0A, 650V, RDS(on) = 3.0Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS GDS G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalan.

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