TSF12N60M Datasheet 600V N-Channel MOSFET

Manufacturer: Truesemi

Overview: TSP12N60M / TSF12N60M TSP12N60M / TSF12N60M 600V N-Channel MOSFET.

TSF12N60M 600v n-channel mosfet by Truesemi - Datasheet Preview

Datasheet Details

Part number	TSF12N60M
Manufacturer	Truesemi
File Size	346.97 KB
Description	600V N-Channel MOSFET
Download	TSF12N60M Download (PDF)

General Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

- 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1).

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