TSF80R600S1 Key Features
- 850V @TJ = 150 ℃
- Typ. RDS(on) = 0.55Ω
- Ultra Low gate charge (typ. Qg = 35nC)
- 100% avalanche tested
- Part: TSF80R600S1
- Manufacturer: Truesemi
- Size: 535.58 KB
Related Truesemi Datasheets
| Part Number | Description |
|---|---|
| TSF80R1K3S1 | N-Channel MOSFET |
| TSF80R240S1 | N-Channel MOSFET |
| TSF80R380S1 | N-Channel MOSFET |
| TSF80R500S1 | N-Channel MOSFET |
| TSF80R850S1 | N-Channel MOSFET |
TSF80R600S1 Description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in...