Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Features
- 650V @TJ = 150 ℃.
- Typ. RDS(on) = 0.16Ω.
- Ultra Low Gate Charge (typ. Qg = 63nC).
- 100% avalanche tested.
- Rohs Compliant
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
VGSS EAS IAR EAR dv/dt
Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current.
TSK20N60S-Truesemi.pdf
