Datasheet4U Logo Datasheet4U.com

TSK20N50M - N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20A, 500V, RDS(on) = 0.26 @VGS = 10 V.
  • Low gate charge ( typical 70nC).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D GD S TO-247 Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetiti.

📥 Download Datasheet

Datasheet Details

Part number TSK20N50M
Manufacturer Truesemi
File Size 718.73 KB
Description N-Channel MOSFET
Datasheet download datasheet TSK20N50M Datasheet

📁 Similar Datasheet

  • TSKS5400 - GaAs Infrared Emitting Diode in Side View Package (Vishay Telefunken)
Other Datasheets by Truesemi

Full PDF Text Transcription

Click to expand full text
TSK20N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 20A, 500V, RDS(on) = 0.
Published: |