TSK20N60S Key Features
- 650V @TJ = 150 ℃
- Typ. RDS(on) = 0.16Ω
- Ultra Low Gate Charge (typ. Qg = 63nC)
- 100% avalanche tested
- Rohs pliant
- Part: TSK20N60S
- Manufacturer: Truesemi
- Size: 943.23 KB
Related Truesemi Datasheets
| Part Number | Description |
|---|---|
| TSK20N50M | N-Channel MOSFET |
| TSK50R240S1 | N-Channel MOSFET |
| TSK60R070S1 | N-Channel MOSFET |
| TSK60R070SFD | N-Channel MOSFET |
| TSK60R190S1 | N-Channel MOSFET |
TSK20N60S Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET is suitable for various AC/DC power conversion inswitching...