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TSP60R650S1 Datasheet N-Channel MOSFET

Manufacturer: Truesemi

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Datasheet Details

Part number TSP60R650S1
Manufacturer Truesemi
File Size 705.81 KB
Description N-Channel MOSFET
Download TSP60R650S1 Download (PDF)

General Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

Overview

TSP60R650S1 600V 7A N-Channel SJ-MOSFET TSP60R650S1 600V 7A N-Channel SJ-MOSFET.

Key Features

  • 650V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.58Ω.
  • Ultra Low gate charge (typ. Qg = 25nC).
  • 100% avalanche tested Absolute Maximum Ratings Sym bol VDSS ID IDM VGSS EAS IAR EAR Param eter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current.
  • Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive.

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