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TSP740M - N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 10.5A,400V,Max. RDS(on)=0.53 Ω @ VGS =10V.
  • Low gate charge(typical 30nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avala.

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Datasheet Details

Part number TSP740M
Manufacturer Truesemi
File Size 329.80 KB
Description N-Channel MOSFET
Datasheet download datasheet TSP740M Datasheet
Additional preview pages of the TSP740M datasheet.

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Full PDF Text Transcription

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TSP740M/TSF740M TSP740M/TSF740M 400V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 10.5A,400V,Max.RDS(on)=0.
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