TSU1N60M mosfet equivalent, n-channel mosfet.
* 1.0A,600V,Max.RDS(on)=11.5 Ω @ VGS =10V
* Low gate charge(typical 5.2nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved d.
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t.
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