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TSU630M Datasheet N-Channel MOSFET

Manufacturer: Truesemi

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Datasheet Details

Part number TSU630M
Manufacturer Truesemi
File Size 404.72 KB
Description N-Channel MOSFET
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General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

TSD630M/TSU630M TSD630M/TSU630M 200V N-Channel MOSFET General.

Key Features

  • 7.8A,200V,Max. RDS(on)=0.4 Ω @ VGS =10V.
  • Low gate charge(typical 20nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanc.

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