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2021 - N-Channel Small Signal MOSFET

General Description

The 2021 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

Key Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-323.

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Datasheet Details

Part number 2021
Manufacturer Tuofeng Semiconductor
File Size 195.80 KB
Description N-Channel Small Signal MOSFET
Datasheet download datasheet 2021 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2021 N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.310@ VGS=4.5V 0.360@ VGS=2.5V 0.460@ VGS=1.8V Descriptions The 2021 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product 2021 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-323 Applications z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift z SOT-323 D 3 12 GS Pin configuration (Top view) Shenzhen Tuofeng Semiconductor Technology Co.