Datasheet Details
| Part number | 8810 |
|---|---|
| Manufacturer | Tuofeng Semiconductor |
| File Size | 241.90 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 8810 Datasheet
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General Description
The 8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protected.
Key Features
- VDS (V) = 20V ID = 6A (V GS = 4.5V) RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.5V) ESD Rating: 2000V HBM D1/D2 S1 S1 G1 TSSOP-8 Top View 18 27 36 45 D1/D2 S2 S2 G2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C ID Pulsed Drain Current B IDM Power Dissipation A TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 6 30 1.5.