* VDS (V) = 20V ID = 6A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 38mΩ (VGS = 2.5V) D1/D2 S1 S1 G1 TSSOP-8 Top View 18 27 36 45 D1/D2 S2 S2 G2 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Cont
8820
Tuofeng Semiconductor
171.69 KB
Dual n-channel mosfet.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8820 8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Descriptio.
📁 Related Datasheet
8821xxx Aluminum Electrolytic Capacitor (Fenghua Advanced Technology)
8822 Dual N-Channel MOSFET (Tuofeng Semiconductor)
882212 5.08mm (.200) Pitch Beau Eurostyle Medium Profile Two Level Terminal Block Modular 12 Circuits (Molex Electronics)
880060 1227.42 MHz GPS L2 BAW Filter (TriQuint Semiconductor)
880085 1575 MHz GPS L1 BAW Filter (TriQuint Semiconductor)
880094 1575.42 MHz GPS L1 BAW Filter (TriQuint Semiconductor)
880098 1575 MHz GPS BAW Filter (TriQuint Semiconductor)
880126 2106 MHz BAW Filter (TriQuint Semiconductor)
880148 2324 MHz BAW RF Filter (TriQuint Semiconductor)
880157 2560 MHz S-Band BAW Filter (TriQuint Semiconductor)
