Description
The 8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.
Features
- VDS (V) = 20V ID = 6 A (VGS = 10V)
RDS(ON) < 28mΩ (VGS = 4.5V)
RDS(ON) < 38mΩ (VGS = 2.5V)
TSSOP-8 Top View
D1 D2
D1/D2 S1 S1 G1
1 2 3 4
8 D1/D2 7 S2 6 S2 5 G2
G1 G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
TA=25°C
Pulsed Drain Current B
ID IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum 20 ±10 6
30 1.5 0.96 -55 to.
8822-TuofengSemiconductor.pdf
