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MA4E1317 - (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes

General Description

and Applications M/A-COM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E1319-2 series tee are gallium arsenide flip chip Schottky barrier diodes.

These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.

The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.

Overview

GaAs Flip Chip Schottky Barrier Diodes.

Key Features

  • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1 MA4E1317.