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MA4E1317 - GaAs Flip Chip Schottky Barrier Diodes

This page provides the datasheet information for the MA4E1317, a member of the MA4E1317-MA GaAs Flip Chip Schottky Barrier Diodes family.

Datasheet Summary

Description

The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes.

Features

  • Low Series Resistance.
  • Low Capacitance.
  • High Cutoff Frequency.
  • Silicon Nitride Passivation.
  • Polyimide Scratch Protection.
  • Designed for Easy Circuit Insertion.

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Datasheet preview – MA4E1317

Datasheet Details

Part number MA4E1317
Manufacturer MA-COM
File Size 477.42 KB
Description GaAs Flip Chip Schottky Barrier Diodes
Datasheet download datasheet MA4E1317 Datasheet
Additional preview pages of the MA4E1317 datasheet.

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Full PDF Text Transcription

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GaAs Flip Chip Schottky Barrier Diodes Features • Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Designed for Easy Circuit Insertion Description and Applications The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling.
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