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MA4E1317 - (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes

General Description

M/A-COM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E1319-2 series tee are gallium arsenide flip chip Schottky barrier diodes.

Key Features

  • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1 MA4E1317.

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📁 Similar Datasheet

Part Number Description Manufacturer
MA4E1317 GaAs Flip Chip Schottky Barrier Diodes MA-COM
MA4E1310 GaAs Flip Chip Schottky Barrier Diode MA-COM
MA4E1318 GaAs Flip Chip Schottky Barrier Diodes MA-COM
MA4E1319-1 GaAs Flip Chip Schottky Barrier Diodes MA-COM
MA4E1319-2 GaAs Flip Chip Schottky Barrier Diodes MA-COM

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
MA4E1318 (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes
MA4E1319-1 (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes
MA4E1319-2 (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes
MA4E1338 Silicon Medium Barrier Schottky Diodes
MA4E1340 Silicon Medium Barrier Schottky Diodes

Full PDF Text Transcription (Reference)

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GaAs Flip Chip Schottky Barrier Diodes Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1 MA4E1317 Description and Applications M/A-COM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E1319-2 series tee are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.