Datasheet4U Logo Datasheet4U.com

MA4SW424B-1 - Monolithic SP4T PIN Diode Switch

Description

The MA4SW424B-1 device is a SP4T Switch with Integrated Bias Network utilizing M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310.

Features

  • n n n Outline Drawing Frequency of Operation: 24 +/- 2 GHz Fully Integrated Bias Network Series Diode, Low Current Consumption Design : +12mA for Insertion Loss, 0 Volts for Isolation n The Device is Wire Bond Compensated at all RF Ports for RF Matching n Rugged, Fully Monolithic, Glass Encapsulated Construction.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MA4SW410B-1 Silicon SP4T PIN Diode Switch MA-COM
MA4SW110 Monolithic PIN Diode Switches Tyco
MA4SW110 Silicon PIN Diode Switches MA-COM
MA4SW210 SPDT Silicon PIN Diode Switch MACOM
MA4SW210 Monolithic PIN Diode Switches Tyco

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
MA4SW410 SP4T Monolithic PIN Diode Switch
MA4SW410B-1 SP4T PIN Diode
MA4SW101 Surface Mount Monolithic PIN Diode Switches
MA4SW201 Surface Mount Monolithic PIN Diode Switches
MA4SW210B-1 Monolithic Pin Diode Switches

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Monolithic SP4T PIN Diode Switch With Integrated Bias Network V 1.00 MA4SW424B-1 Features n n n Outline Drawing Frequency of Operation: 24 +/- 2 GHz Fully Integrated Bias Network Series Diode, Low Current Consumption Design : +12mA for Insertion Loss, 0 Volts for Isolation n The Device is Wire Bond Compensated at all RF Ports for RF Matching n Rugged, Fully Monolithic, Glass Encapsulated Construction Description The MA4SW424B-1 device is a SP4T Switch with Integrated Bias Network utilizing M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and/or shunt diodes or vias by imbedding them in a low loss, low dispersion glass.
Published: |