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PH1819-33 - WIRELESS POWER TRANSISTOR

Key Features

  • l l l l l PHl819-33 v2.01 I.744 (18.90)-1 NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System 225 (5.72).
  • .015 (0.38) , I ;48/6.30) &&y&T www. DataSheet4U. com 1.
  • I 1 f CqO(6.35) Absolute’ Maximum Ratings at 25°C I Parameter Collector-EmitterVoltage Collector-EmitterVoltage Emitter-Base Voltage CollectorCurrent Power Dissipation StorageTemperature ) JunctionTem.

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an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz Features l l l l l PHl819-33 v2.01 I.744 (18.90)-1 NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System 225 (5.72)*.015 (0.38) , I ;48/6.30) &&y&T www.DataSheet4U.com 1 *I 1 f CqO(6.35) Absolute’ Maximum Ratings at 25°C I Parameter Collector-EmitterVoltage Collector-EmitterVoltage Emitter-Base Voltage CollectorCurrent Power Dissipation StorageTemperature ) JunctionTemperature Thermal Resistance I Sym~l VCEO VcE.s Vem I ‘c PO T c-Fe ) T, 6JC I Rating 25 65 3.0 1 Units V V 1 225(5.72)+.015 (0.38) ,181 (4.6O)zt.OlO (0.25) (5.59) 2.20 I-.co5 (0.13)+.001 (0.03) 1 I / 11 D6Ojl.52) f V I 4.