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QM2502M9 - Dual N-Ch 20V Fast Switching MOSFETs

Description

The QM2502M9 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V RDSON 18.5mΩ ID 11A.

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Datasheet Details

Part number QM2502M9
Manufacturer UBIQ
File Size 336.17 KB
Description Dual N-Ch 20V Fast Switching MOSFETs
Datasheet download datasheet QM2502M9 Datasheet
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Full PDF Text Transcription

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QM2502M9 Dual N-Ch 20V Fast Switching MOSFETs General Description The QM2502M9 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2502M9 meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V RDSON 18.
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