QM2502M9
Description
The QM2502M9 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2502M9 meet the Ro HS and Green Product requirement with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Product Summery
BVDSS 20V
RDSON 18.5mΩ
ID 11A
Applications z Power management in portable and battery operated products z DC-DC Power System z Load Switch
PRPAK2X5 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃ PD@TA=70℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature...
