QM3016N3 Datasheet | UBIQ Semiconductor

Description The QM3016N3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3016N3 meet the Ro HS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cd V/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Product Summery BVDSS 30V RDSON 4mΩ ID 80A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch DFN3X3 Pin Configuration SS S G Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 30 ±20 80 50 17.2 13.8 160 317 53.8 43.4 1.67 -55 to 150 -55 to 150 Units V V A A A A A m J A W W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ. ----- Max. 75 2.88 Unit ℃/W ℃/W Rev A.02...