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QM3018P Datasheet Preview

QM3018P Datasheet

N-Ch 30V Fast Switching MOSFETs

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QM3018P
N-Ch 30V Fast Switching MOSFETs
General Description
The QM3018P is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3018P meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
30V
RDSON
3m
ID
182A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter
z Networking DC-DC Power System
z Power Tool Application
TO220 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1,7
Continuous Drain Current, VGS @ 10V1,7
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
G DS
Rating
30
±20
182
140
365
378
70.2
149
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
0.84
Unit
/W
/W
Rev A.01 D041910
1




UBIQ

QM3018P Datasheet Preview

QM3018P Datasheet

N-Ch 30V Fast Switching MOSFETs

No Preview Available !

QM3018P
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=30A
VGS=10V , ID=15A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=30A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=10V , ID=15A
VDD=15V , VGS=10V , RG=3.3Ω,
ID=1A
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
1
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.022
2.4
3.2
1.5
-6.1
---
---
---
50
0.9
56.9
13.8
23.5
20.1
6.3
124.6
15.8
5935
725
538
Max.
---
---
3
4
2.5
---
2
10
±100
---
1.8
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=30A
Min.
69
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
IS Continuous Source Current1,6
ISM Pulsed Source Current2,6
VSD Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=A , TJ=25
---
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=70.2A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
7.Package limitation current is 120A.
Typ.
---
---
---
Max.
182
365
1.2
Unit
A
A
V
2


Part Number QM3018P
Description N-Ch 30V Fast Switching MOSFETs
Maker UBIQ
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QM3018P Datasheet PDF





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