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QM3016AM3 - N-Channel 30V Fast Switching MOSFET

General Description

The QM3016AM3 is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.

It is ideally suited to support synchronous buck converter applications.

Key Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • Green Device Available Product Summary VDS 30V RDS(ON) max (VGS=10V) 4mΩ ID (TC=25 °C) 72A.

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Datasheet Details

Part number QM3016AM3
Manufacturer uPI Semiconductor
File Size 340.06 KB
Description N-Channel 30V Fast Switching MOSFET
Datasheet download datasheet QM3016AM3 Datasheet

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QM3016AM3 N-Channel 30V Fast Switching MOSFET General Description The QM3016AM3 is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications. The QM3016AM3 meets RoHS and Green Product requirements while supporting full function reliability.