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QM3203S Datasheet Preview

QM3203S Datasheet

Dual P-Ch 30V Fast Switching MOSFETs

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QM3203S
Dual P-Ch 30V Fast Switching MOSFETs
General Description
The QM3203S is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3203S meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
-30V
RDSON
25m
ID
-6.5A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOP8 Pin Configuration
D1 D1 D2 D2
Absolute Maximum Ratings
S1 G1S2 G2
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, -VGS @ -10V1
Continuous Drain Current, -VGS @ -10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
±20
-6.5
-5.2
-26
176
-38
1.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
85
25
Unit
/W
/W
Rev A.02 D051011
1




UBIQ

QM3203S Datasheet Preview

QM3203S Datasheet

Dual P-Ch 30V Fast Switching MOSFETs

No Preview Available !

QM3203S
Dual P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VGS=-10V , ID=-6A
VGS=-4.5V , ID=-4A
VGS=VDS , ID =-250uA
VDS=-24V , VGS=0V , TJ=25
VDS=-24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=-5V , ID=-6A
VDS=0V , VGS=0V , f=1MHz
VDS=-15V , VGS=-4.5V , ID=-6A
VDD=-15V , VGS=-10V , RG=3.3Ω,
ID=-6A
VDS=-15V , VGS=0V , f=1MHz
Min.
-30
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.022
20
32
-1.5
4.6
---
---
---
17
13
12.6
4.8
4.8
4.6
14.8
41
19.6
1345
194
158
Max.
---
---
25
42
-2.5
---
-1
-5
±100
---
26
17.6
6.7
6.7
9.2
26.6
82
39.2
1883
272
221
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=-25V , L=0.1mH , IAS=-20A
Min.
49
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
IS Continuous Source Current1,6
ISM Pulsed Source Current2,6
VSD Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
---
---
---
trr Reverse Recovery Time
---
Qrr Reverse Recovery Charge
IF=-6A , dI/dt=100A/µs , TJ=25---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-38A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typ.
---
---
---
16.3
5.9
Max.
-6.5
-26
-1.2
---
---
Unit
A
A
V
nS
nC
2


Part Number QM3203S
Description Dual P-Ch 30V Fast Switching MOSFETs
Maker UBIQ
Total Page 4 Pages
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