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QM3208S - Dual N-Channel MOSFET

General Description

The QM3208S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The QM3208S meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 30V RDSON 25mΩ ID 6.2A.

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Datasheet Details

Part number QM3208S
Manufacturer UBIQ
File Size 341.87 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet QM3208S Datasheet

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QM3208S Dual N-Ch 30V Fast Switching MOSFETs General Description The QM3208S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3208S meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 30V RDSON 25mΩ ID 6.