QM6007D
P-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25℃ , ID=-1mA
VGS=-10V , ID=-6A
VGS=-4.5V , ID=-4A
VGS=VDS , ID =-250uA
VDS=-48V , VGS=0V , TJ=25℃
VDS=-48V , VGS=0V , TJ=55℃
VGS=±20V , VDS=0V
VDS=-10V , ID=-6A
VDS=-20V , VGS=-4.5V , ID=-6A
VDD=-15V , VGS=-10V , RG=3.3Ω,
ID=-1A
VDS=-15V , VGS=0V , f=1MHz
Min.
-60
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-1.0
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Typ.
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-0.021
140
175
-1.5
4.08
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5.8
4.59
1.39
1.62
17.4
5.4
37.2
2.4
531
59
38
Max.
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170
215
-2.5
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1
5
±100
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Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=-25V , L=0.1mH , IAS=-10A
Min.
7.3
Typ.
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Max.
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Unit
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
IS Continuous Source Current1,6
ISM Pulsed Source Current2,6
VSD Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
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Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-15.3A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typ.
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Max.
-8
-16
-1.2
Unit
A
A
V
2
