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QM6007D Datasheet Preview

QM6007D Datasheet

P-Ch 60V Fast Switching MOSFETs

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QM6007D
P-Ch 60V Fast Switching MOSFETs
General Description
The QM6007D is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM6007D meet the RoHS and Green Product
requirement,100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
-60V
RDSON
170m
ID
-8A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TO252 Pin Configuration
D
Absolute Maximum Ratings
GDS
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, -VGS @ -10V1
Continuous Drain Current, -VGS @ -10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
±20
-8
-6
-16
17
-15.3
20.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
6
Unit
/W
/W
Rev A.01 D121609
1




UBIQ

QM6007D Datasheet Preview

QM6007D Datasheet

P-Ch 60V Fast Switching MOSFETs

No Preview Available !

QM6007D
P-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VGS=-10V , ID=-6A
VGS=-4.5V , ID=-4A
VGS=VDS , ID =-250uA
VDS=-48V , VGS=0V , TJ=25
VDS=-48V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=-10V , ID=-6A
VDS=-20V , VGS=-4.5V , ID=-6A
VDD=-15V , VGS=-10V , RG=3.3Ω,
ID=-1A
VDS=-15V , VGS=0V , f=1MHz
Min.
-60
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.021
140
175
-1.5
4.08
---
---
---
5.8
4.59
1.39
1.62
17.4
5.4
37.2
2.4
531
59
38
Max.
---
---
170
215
-2.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
mΩ
V
mV/
uA
nA
S
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=-25V , L=0.1mH , IAS=-10A
Min.
7.3
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
IS Continuous Source Current1,6
ISM Pulsed Source Current2,6
VSD Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
---
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-15.3A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typ.
---
---
---
Max.
-8
-16
-1.2
Unit
A
A
V
2


Part Number QM6007D
Description P-Ch 60V Fast Switching MOSFETs
Maker UBIQ
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QM6007D Datasheet PDF






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